Preparation of ZnO resistive switching film and its corrosion behavior in 3.5 wt.% NaCl solution.

[Display omitted] • ZnO resistive switching film is prepared by one-step hydrothermal method. • Application of electric field can promote the formation of oxygen-vacancy in film. • High-low resistive switching behavior of film varies with oxygen vacancy content. ZnO resistive switching films were prepared on the surface of SS304 using hydrothermal method combined with heat treatment. The surface and cross-sectional morphology, composition, oxygen vacancy content and semiconductor type of ZnO films were characterized. The corrosion resistance and resistance switching properties of ZnO films were determined by electrochemical methods. The oxygen vacancy formation energy, surface adsorption energy and diffusion barrier of ZnO system were calculated using first-principles. The results show that the samples with 0.5 mol/L Zn2+ and 4 mol/L NaOH have the best performance, and its corrosion resistance efficiency can reach more than 99.5 %. Calculations show that the ZnO film containing oxygen vacancies still prevents the entry of Cl−, and applied electric field promotes the formation of oxygen vacancies and conductive filaments. Thus, polarization-immersion treatment can adjust the oxygen vacancy content in film, which enables film to switch between high and low resistance states, realizing the cyclic resistance-switching performance of film and greatly extending service life. [ABSTRACT FROM AUTHOR]