Photoresponse of large-area atomically thin β-Ga2O3 and GaN materials via liquid metal print synthesized.

[Display omitted] • The primary innovation lies in its comprehensive exploration of the structure and photocurrent characteristics of β-Ga 2 O 3 and GaN two-dimensional materials synthesized via liquid metals. • The focus is on quantitative discussions regarding β-Ga 2 O 3 and GaN photocurrent detectors. • Moreover, the investigation delves into distinctions in photoresponse and recovery times, employing concepts like energy bandgap (Eg) and crystallinity structure. This study uses liquid gallium metal to synthesize two-dimensional gallium oxide and gallium nitride ultra-thin layers. Addressing the challenges of conventional methods, this approach combines liquid metal properties with Polydimethylsiloxane (PDMS) transfer printing, resulting in large-area, highly clean, and low-residue amorphous Ga-based wide bandgap semiconductors. Transformation of amorphous Ga 2 O 3 into crystallized β-Ga 2 O 3 and GaN is achieved through annealing and ammoniation. Comprehensive characterizations confirm successful changes. Photodetector devices are fabricated and characterized, revealing Ga 2 O 3 photosensitive nature with distinct performance metrics. GaN, while exhibiting lower photoresponse, displays rapid photocurrent recovery, making it promising for photodetector applications. This research offers a scalable method for two-dimensional gallium-group semiconductor synthesis, holding potential for diverse optoelectronic applications. [ABSTRACT FROM AUTHOR]