Design of AlGaN-Zn(Si,Ge)N2 quantum wells for high-efficiency ultraviolet light emitters.

MLA

Hu, Chenxi, et al. “Design of AlGaN-Zn(Si,Ge)N2 Quantum Wells for High-Efficiency Ultraviolet Light Emitters.” Journal of Applied Physics, vol. 135, no. 2, Jan. 2024, pp. 1–6. EBSCOhost, https://doi.org/10.1063/5.0182716.

APA

Hu, C., Kash, K., & Zhao, H. (2024). Design of AlGaN-Zn(Si,Ge)N2 quantum wells for high-efficiency ultraviolet light emitters. Journal of Applied Physics, 135(2), 1–6. https://doi.org/10.1063/5.0182716

Chicago

Hu, Chenxi, Kathleen Kash, and Hongping Zhao. 2024. “Design of AlGaN-Zn(Si,Ge)N2 Quantum Wells for High-Efficiency Ultraviolet Light Emitters.” Journal of Applied Physics 135 (2): 1–6. doi:10.1063/5.0182716.