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Investigation of thermoelectric and magnetotransport properties of single crystalline Bi2Se3 topological insulator.

Authors :
Singha, Pintu
Das, Subarna
Rana, Nabakumar
Mukherjee, Suchandra
Chatterjee, Souvik
Bandyopadhyay, Sudipta
Banerjee, Aritra
Source :
Journal of Applied Physics. 1/14/2024, Vol. 135 Issue 2, p1-11. 11p.
Publication Year :
2024

Abstract

The realization of remarkable thermoelectric (TE) properties in a novel single-crystalline quantum material is a topic of prime interest in the field of thermoelectricity. It necessitates a proper understanding of transport properties under magnetic field and magnetic properties at low field. We report polarized Raman spectroscopic study, TE properties, and magneto-resistance (MR) along with magnetic characterization of single-crystalline Bi2Se3. Polarized Raman spectrum confirms the strong polarization effect of A 1 g 1 and A 1 g 2 phonon modes, which verifies the anisotropic nature of the Bi2Se3 single crystal. Magnetization measurement along the in-plane direction of single crystal divulges a cusp-like paramagnetic response in susceptibility plot, indicating the presence of topological surface states (TSSs) in the material. In-depth MR studies performed in different configurations also confirm the presence of anisotropy in the single-crystalline Bi2Se3 sample. A sharp rise in MR value near zero magnetic field and low-temperature regime manifests a weak anti-localization (WAL) effect, depicting the quantum origin of the conductivity behavior at low temperature. Moreover, in-plane magneto-conductivity data at low-temperature (up to 5 K) and low-field region (≤15 kOe) confirm the dominance of the WAL effect (due to TSS) with a negligible bulk contribution. Quantum oscillation (SdH) in magneto-transport data also exhibits the signature of TSS. Additionally, an exceptional TE power factor of ∼950 μW m−1 K−2 at 300 K is achieved, which is one of the highest values reported for pristine Bi2Se3. Our findings pave the way for designing single crystals, which give dual advantages of being a good TE material along with a topological insulator bearing potential application. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
135
Issue :
2
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
174779013
Full Text :
https://doi.org/10.1063/5.0168564