Leakage current behavior of La-doped Bi2Ti2O7 thin films by a chemical solution deposition method

Abstract: Lanthanum-doped Bi2Ti2O7 thin films have been prepared using chemical solution deposition method, and then treated by different annealing temperatures. X-ray diffraction analysis confirmed that the crystallinity of the films increased with increasing annealing temperature and the optimum temperature was found to be 800 °C. The effects of relaxation time and various annealing temperatures and films thickness on the leakage current density were investigated. The results showed that the film annealed at 800°C had good insulating properties and can be considered using in advanced MOS transistors. [Copyright &y& Elsevier]