Performance analysis of bottom gate elevated electrode structure and bottom gate bottom contact structure organic thin film transistors.

Conventional organic thin film transistors (OTFT) with gate and contact electrodes placed in bottom configuration (BGBC) are commonly used in implementing combinational circuits owing to their simple fabrication and robust performance. Lately these devices are under scrutiny for their inferior output drain current levels. In order to combat this limitation various alternate structures are being proposed. However, some structures like double gate organic thin film transistors increase the drain current but additional fabrication steps, manufacturing cost and increment in size of transistor limit their applications. Therefore, further study is required to enhance BGBC OTFTs in terms of performance while maintaining the original fabrication cost, size of the material composition. Bottom gate elevated electrode (BGEE) organic thin film transistor proposed in this research article enhances the drain current without altering the overall size of BGBC OTFT. BGEE OTFT offers better charge accumulation in the conducting channel and enhances the overall performance of the OTFT significantly for same voltage regime as BGBC OTFT. Output drive (drain) current obtained in BGEE OTFT is almost twice the drain current generated in conventional BGBC of same size, having same material layers under same voltage bias conditions. [ABSTRACT FROM AUTHOR]