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N-Type Field-Effect Transistors Made of an Individual Nitrogen-Doped Multiwalled Carbon Nanotube.
- Source :
-
Journal of the American Chemical Society . 6/22/2005, Vol. 127 Issue 24, p8614-8617. 4p. - Publication Year :
- 2005
-
Abstract
- We report on the fabrication and characterization of field-effect transistor based on an individual multiwalled nitrogen-doped carbon nanotube. Our measurements show that the N-doped carbon nanotubes have n-type properties. The contact properties of the tube and Pt electrodes are also studied in detail. Temperature dependence of two-terminal transport experiments suggests that transport is dominated by thermionic emission and tunneling through a 0.2 eV Schottky contact barrier. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00027863
- Volume :
- 127
- Issue :
- 24
- Database :
- Academic Search Index
- Journal :
- Journal of the American Chemical Society
- Publication Type :
- Academic Journal
- Accession number :
- 17496174
- Full Text :
- https://doi.org/10.1021/ja042554y