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Research on the flexible phase change memory devices based on Ge2Sb2Te5/Mg35Sb65 superlattice-like thin films.
- Source :
-
Journal of Alloys & Compounds . Mar2024, Vol. 978, pN.PAG-N.PAG. 1p. - Publication Year :
- 2024
-
Abstract
- In this paper, the flexible phase change behavior of Ge 2 Sb 2 Te 5 /Mg 35 Sb 65 superlattice-like memory based on PEEK substrate is investigated in detail. The flexible memory has good thermal stability (T c ∼270.4 °C), resistance to bending (more than 2 ×104 bending times), low resistance drift (less than 25% of the Ge 2 Sb 2 Te 5 film), stable amorphous to crystalline resistance ratio (∼2 orders of magnitude) and ultra-fast information access speed (∼5 ns). Bending refines the grain of the film and widens the band gap. This study provides a potential option for flexible information storage electronics. • Ge 2 Sb 2 Te 5 /Mg 35 Sb 65 superlattice-like films on PEEK substrates possess good thermal stability and mechanical bending durability. • After several bending cycles, the FPCM can even complete the ultrafast phase transition within 5 ns. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09258388
- Volume :
- 978
- Database :
- Academic Search Index
- Journal :
- Journal of Alloys & Compounds
- Publication Type :
- Academic Journal
- Accession number :
- 174974876
- Full Text :
- https://doi.org/10.1016/j.jallcom.2024.173566