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p-GaN gate power HEMT heterostructure as a versatile platform for extremely wide-temperature-range (X-WTR) applications.
- Source :
-
Applied Physics Letters . 1/22/2024, Vol. 124 Issue 4, p1-5. 5p. - Publication Year :
- 2024
-
Abstract
- In this work, we manifest that the epitaxial structure for p-GaN gate high-electron-mobility transistor is a versatile platform to develop electronics for operating in an extremely wide temperature range (X-WTR) from 2 to 675 K, with comprehensive X-WTR studies on device operation and circuit behaviors. The key enabler for the high-temperature operation is the wide bandgap that substantially suppresses the thermal excitation of the intrinsic carrier. However, for the low-temperature side, the two-dimensional electron and hole gas (2DEG and 2DHG) channels at the heterojunctions are formed by the temperature-insensitive polarization fields, which free the carriers from freezing out. The monolithically integrated GaN n-FET, p-FET, and the resultant complementary circuits are, therefore, shown to operate in X-WTR. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 124
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 175035746
- Full Text :
- https://doi.org/10.1063/5.0184784