Over-Current Capability of Silicon Carbide and Silicon Devices for Short Power Pulses with Copper and Phase Change Materials below the Chip.

MLA

Bhadoria, Shubhangi, et al. “Over-Current Capability of Silicon Carbide and Silicon Devices for Short Power Pulses with Copper and Phase Change Materials below the Chip.” Energies (19961073), vol. 17, no. 2, Jan. 2024, p. 462. EBSCOhost, https://doi.org/10.3390/en17020462.

APA

Bhadoria, S., Dijkhuizen, F., Zhang, X., Ran, L., & Nee, H.-P. (2024). Over-Current Capability of Silicon Carbide and Silicon Devices for Short Power Pulses with Copper and Phase Change Materials below the Chip. Energies (19961073), 17(2), 462. https://doi.org/10.3390/en17020462

Chicago

Bhadoria, Shubhangi, Frans Dijkhuizen, Xu Zhang, Li Ran, and Hans-Peter Nee. 2024. “Over-Current Capability of Silicon Carbide and Silicon Devices for Short Power Pulses with Copper and Phase Change Materials below the Chip.” Energies (19961073) 17 (2): 462. doi:10.3390/en17020462.