The effect of lithography processing on the I–V characteristics of Al–Al2O3–Ag junctions.

We present a detailed study of room-temperature current–voltage characteristics of Al–Al2O3–Ag junctions in which the Al electrode was treated by photolithography processing and chemical etching prior to the Al2O3 layer growth. The I–V curves exhibit polarity-dependent irreversible conductance changes and regions of negative differential resistance. These phenomena take place only if the bias voltage exceeds 0.8 V. We discuss a qualitative mechanism for such behavior based on charge accumulation in traps present in the barrier, due to the chemical treatment. [ABSTRACT FROM AUTHOR]