Back to Search
Start Over
Sub-band structure engineering for advanced CMOS channels
- Source :
-
Solid-State Electronics . May2005, Vol. 49 Issue 5, p684-694. 11p. - Publication Year :
- 2005
-
Abstract
- Abstract: This paper reviews our recent studies of novel CMOS channels based on the concept of sub-band structure engineering. This device design concept can be realized as strained-Si channel MOSFETs, ultra-thin SOI MOSFETs and Ge-on-Insulator (GOI) MOSFETs. An important factor for the electron mobility enhancement is the introduction of larger sub-band energy splitting between the 2- and 4-fold valleys on a (100) surface, which can be obtained in strained-Si and ultra-thin body channels. The electrical properties of strained-Si MOSFETs are summarized with an emphasis on strained-SOI structures. Also, the importance of the precise control of ultra-thin SOI thickness is pointed out from the experimental results of the SOI thickness dependence of mobility. Furthermore, it is shown that the increase in the sub-band energy splitting can also be effective in obtaining higher current drive of n-channel MOSFETs under ballistic transport regime. This suggests that the current drive enhancement based on MOS channel engineering utilizing strain and ultra-thin body structures can be extended to ultra-short channel MOSFETs dominated by ballistic transport. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00381101
- Volume :
- 49
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Solid-State Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 17525399
- Full Text :
- https://doi.org/10.1016/j.sse.2004.08.020