Back to Search
Start Over
High-performance thin-film transistors based on aligned carbon nanotubes for mini- and micro-LED displays.
- Source :
-
Carbon . Jan2024, Vol. 218, pN.PAG-N.PAG. 1p. - Publication Year :
- 2024
-
Abstract
- Inorganic mini-LEDs (mLEDs) and micro-LEDs (μLEDs) have ultrahigh luminance and long lifetimes, and are challenging liquid crystal displays (LCDs) and organic light-emitting diode (OLED) displays for next-generation displays. Backplane thin-film transistors (TFTs) for mLED/μLED displays with high mobility and large driving current are under development as currently widely used backplane active materials such as crystalline silicon (CMOS Si), amorphous silicon (a-Si), low-temperature polycrystalline silicon (LTPS), and metal oxides are facing difficulties to meet the requirements. Semiconducting carbon nanotubes (s-CNTs) have long been considered as promising materials for TFTs because of their unique electronic properties. However, TFTs based on s-CNT random networks show inadequate performance due to large amounts of inter-tube junctions. Here, we report high performance TFTs based on wafer-scale, high-density aligned s-CNT array (A-CNT) for mLED/μLED driving backplanes. These A-CNT TFTs with micrometer scale channel length were fabricated using standard semiconductor manufacturing process, and exhibited mobility as high as 160 cm2/Vs and driving current as large as 417 μA/μm at operation voltage of ∼3 V, exceeding commercially available TFTs with similar device sizes. In addition, these A-CNT TFTs have demonstrated good driving capability for commercial mLEDs in a one-transistor-one-diode (1T1D) pixel circuit configuration, and been capable of driving commercially available mLED/μLED displays. Moreover, a prototype display with 2 × 2 mLED array have been demonstrated with full control of each pixel, manifesting the great potential for A-CNT TFT technology for backplane of mLED/μLED displays. High performance transistors based on aligned carbon nanotube films were fabricated, which exhibited high mobility (up to 160 cm2/Vs) and high current (up to 417 μA/μm) exceeding commercially available TFTs with similar device sizes, and have demonstrated good driving capability for commercial mini- and micro-LEDs. [Display omitted] [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00086223
- Volume :
- 218
- Database :
- Academic Search Index
- Journal :
- Carbon
- Publication Type :
- Academic Journal
- Accession number :
- 175276681
- Full Text :
- https://doi.org/10.1016/j.carbon.2023.118718