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Wet Oxidation of Semiconducting Silicon Carbide Wafers.
- Source :
-
Journal of Synthetic Crystals . Feb2024, Vol. 53 Issue 2, p181-193. 13p. - Publication Year :
- 2024
-
Abstract
- Semiconducting silicon carbide (4H-SiC) exhibits characteristics of high hardness, notable brittleness, and excellent chemical stability. The commonly employed technique for achieving an ultra-smooth and flat surface is chemical mechanical polishing (CMP), which is utilized to process the 4H-SiC surface. Wet oxidation, as an important process of chemical-mechanical polishing of single-crystal 4H-SiC, directly affects the rate and surface quality of CMP. This paper provides a comprehensive overview of the current research status of wet oxidation of single-crystal 4H-SiC. It discusses the oxidants used in the wet oxidation of 4H-SiC, such as KMnO4, H2O2, K2S2O8. Based on this, it further summarizes commonly employed oxidation-enhancement methods, including photocatalytic-assisted oxidation, electrochemical oxidation, and Fenton reaction. The mechanism of wet oxidation of single-crystal 4H-SiC is analyzed from the aspect of theoretical calculation, and the future research direction of wet oxidation of 4H-SiC is proposed. [ABSTRACT FROM AUTHOR]
- Subjects :
- *SILICON wafers
*CHEMICAL stability
*SILICON carbide
*OXIDIZING agents
Subjects
Details
- Language :
- Chinese
- ISSN :
- 1000985X
- Volume :
- 53
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Journal of Synthetic Crystals
- Publication Type :
- Academic Journal
- Accession number :
- 175291265