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Tuning the crystalline orientation of quasi 1D anisotropic Sb2Se3 as a function of growth temperature for thin film photovoltaic applications.

Authors :
Govindharajulu, Srinivasan Moosi
Jain, Alok Kumar
Piraviperumal, Malar
Source :
Journal of Alloys & Compounds. Apr2024, Vol. 980, pN.PAG-N.PAG. 1p.
Publication Year :
2024

Abstract

Antimony selenide (Sb 2 Se 3) shows excellent photon absorption in the visible region and hence gaining tremendous attention from the last decade for thin film photovoltaics. Also, it has unique one-dimensional crystal structure and simple binary composition. However, the growth of Sb 2 Se 3 thin films with its predominant orientation along [hk1] to make use of easy electrical charge transport seems challenging due to various governing growth parameters. In this work, we have studied the role of growth temperature (between 200 ℃ and 320 ℃) in the crystalline orientation of Sb 2 Se 3 thin films on glass substrates via close-space thermal evaporation. In addition to growth orientation, we have investigated the effect of growth temperature on the surface morphology, elemental composition, film thickness, and optical properties of Sb 2 Se 3 thin films. Electrical properties and photoresponse were measured on [hkl] and [hk0] oriented films to understand the effect of anisotropy and it is inferred that [hk1] oriented film as a favorable one for the charge transport. Also, the photoresponse results showed fair photoconductance under white light illumination and zero applied bias. [Display omitted] • Growth of Sb 2 Se 3 thin films via close-space evaporation using pre synthesized bulk. • Exhibit orientation dependent electrical properties and photoresponse behaviour. • High absorption coefficient, carrier concentration and Hall mobility values. • Self-powered photoconductivity in Sb 2 Se 3 /Ag junction. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09258388
Volume :
980
Database :
Academic Search Index
Journal :
Journal of Alloys & Compounds
Publication Type :
Academic Journal
Accession number :
175296957
Full Text :
https://doi.org/10.1016/j.jallcom.2024.173588