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Investigations on ion irradiation induced strain and structural modifications in 3C–SiC.
- Source :
-
Materials Science in Semiconductor Processing . Apr2024, Vol. 173, pN.PAG-N.PAG. 1p. - Publication Year :
- 2024
-
Abstract
- Ion irradiation induced recovery of defects in 3C–SiC caused by electronic energy loss (S e) in the intermediate energy regime (a few 100s of keV to a few 10s of MeV) is less explored. Towards this, separate and sequential ion irradiation of 200 keV Si+ ions and 14 MeV Si+ ions in 3C–SiC were carried out. In our earlier work, RBS/C findings demonstrated that 14 MeV Si+ ion irradiation (S e - 4.9 keV/nm) resulted in defect recovery in 3C–SiC pre-damaged with 200 keV Si+ ions [1]. The present work investigates the strain and structural evolution using High-resolution X-ray diffraction (HRXRD), Reciprocal space mapping (RSM), X-ray absorption near edge spectroscopy (XANES) and Diffuse reflectance spectroscopy (DRS), in the 3C–SiC layer as a result of ion irradiation induced defect production and recovery. HRXRD results revealed that 200 keV Si+ ion results in 4 % of strain at the projected range of ions and strain relaxation as a result of ionization-induced annealing is observed after subsequent 14 MeV Si+ ion irradiation. RSM measurements showed evidence for the formation of extended defects in sequentially ion irradiated samples. Optical characterization using DRS measurements indicates a reduction of refractive index in the ion-irradiated layer, however, for the amorphous SiC layer (ion dose: 0.6 dpa, 200 keV Si+ ion), the refractive index increased due to a reduction in mass density. Modification of refractive index in the ion irradiated layer is a result of the combination of negative change in volume effect and positive change in electronic polarizability. [Display omitted] [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 13698001
- Volume :
- 173
- Database :
- Academic Search Index
- Journal :
- Materials Science in Semiconductor Processing
- Publication Type :
- Academic Journal
- Accession number :
- 175299924
- Full Text :
- https://doi.org/10.1016/j.mssp.2024.108170