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Direct Z-scheme GaTe/SnS2 van der Waals heterojunction with tunable electronic properties: A promising highly efficient photocatalyst.
- Source :
-
International Journal of Hydrogen Energy . Feb2024, Vol. 54, p979-989. 11p. - Publication Year :
- 2024
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Abstract
- The production of hydrogen through photocatalytic water splitting offers a secure and eco-friendly approach. In this study, the application of GaTe/SnS 2 heterojunction in the field of photocatalysis was studied in depth by using the first-principles calculation method. Based on single-layer GaTe and SnS 2 , a novel two-dimensional GaTe/SnS 2 van der Waals heterojunction (vdwH) was constructed. Through analytical calculations, it is obvious that the GaTe/SnS 2 heterojunction has an indirect bandgap of 0.85eV. Furthermore, its type-II band alignment facilitates efficient separation of photogenerated electrons and holes across different layers. The application of Bader charge analysis revealed an intriguing observation: the GaTe layer transferred a charge of 0.058e to the SnS 2 layer. This charge transfer led to the creation of a robust built-in electric field, which played a pivotal role in efficiently inhibiting the recombination of photogenerated electrons and holes. Under the condition of pH = 0, GaTe/SnS 2 heterojunction can promote redox reaction and realize water splitting. In addition, when the biaxial strain of -3%–3 % is applied to the GaTe/SnS 2 heterojunction, the band edge position and light absorption properties are effectively changed, and more photons participate in the water splitting process. More importantly, the solar-to-hydrogen (STH) efficiency of GaTe/SnS 2 heterojunction reaches 56.6 %, and when ε = 3 %, ηSTH increases to 58.21 %. Hence, our research showcases the GaTe/SnS 2 heterojunction's potential as a highly efficient Z-scheme photocatalyst for water splitting, offering promising prospects for hydrogen production. [Display omitted] • The direct Z-scheme GaTe/SnS 2 heterojunction can effectively promote the separation of electrons and holes. • The GaTe/SnS 2 heterojunction has a built-in electric field from the GaTe to the SnS2 layer. • The absorption coefficient of GaTe/SnS 2 heterojunction is as high as 3.53 × 105cm-1. • The GaTe/SnS 2 van der Waals heterojunction is a highly efficient photocatalyst that can be used for photolysis of water. • The solar-to-hydrogen efficiency of GaTe/SnS 2 van der Waals heterojunction can reach 56.6 %, and can reach 58.21 % when ε = 3 %. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 03603199
- Volume :
- 54
- Database :
- Academic Search Index
- Journal :
- International Journal of Hydrogen Energy
- Publication Type :
- Academic Journal
- Accession number :
- 175411400
- Full Text :
- https://doi.org/10.1016/j.ijhydene.2023.11.180