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The electron transport properties and thermoelectric performance in graphene–boron–nitride-nanoribbon-based heterojunctions.
- Source :
-
Computational Materials Science . Mar2024, Vol. 236, pN.PAG-N.PAG. 1p. - Publication Year :
- 2024
-
Abstract
- The electron transport properties and thermoelectric performance in graphene–boron–nitride-nanoribbon-based heterojunctions (GNR-BNN heterojunctions) have been studied by first-principles calculation. It is found that the electronic transport properties and thermoelectric performance properties are highly sensitive to the geometry details of the GNR-BNN heterojunction. Notably, our calculations reveal that the GNR-BNN heterojunctions not only can present obvious negative differential resistance effects, but also can present high thermoelectric figure of merit ZT: the figure-of-merit ZT will be over 1 at room temperature T = 300 K. Moreover, the thermoelectric performance is significantly enhanced by the combination of defects and alternating boron-nitride structures. Therefore, the GNR-BNN heterojunctions will provide the possibilities for designing and fabrication of multifunctional molecular device design. • GNR-BNN heterojunctions have obvious negative differential resistance effects. • GNR-BNN heterojunctions have high ZT. [Display omitted] [ABSTRACT FROM AUTHOR]
- Subjects :
- *ELECTRON transport
*HETEROJUNCTIONS
*BORON nitride
*BORON steel
Subjects
Details
- Language :
- English
- ISSN :
- 09270256
- Volume :
- 236
- Database :
- Academic Search Index
- Journal :
- Computational Materials Science
- Publication Type :
- Academic Journal
- Accession number :
- 175637509
- Full Text :
- https://doi.org/10.1016/j.commatsci.2024.112858