Ovonic threshold switching behavior of Te-Ge-Se-Sc (TGSS): A rare-earth doped phase-change material.

Phase change memory (PCM) is an exceptional universal memory innovation that offers qualities like fast speed and non-volatility. But major obstacle still exists in achieving better thermal stability and rapid switching at the same time. Therefore, it is crucial to investigate new materials with enhanced properties. To overcome the contrast of access time between storage systems and memories, storage class memory concept based on emerging nonvolatile memory technology has been introduced. Resistive switching has gained much awareness in last decade due to its application in PCM technologies. Investigation of resistive switching on novel Te (1−x) (GeSe 0.5)Sc x (x = 0, 0.05, 0.1, 0.15) quaternary alloy has been analyzed in this paper. Material has revealed electrical resistivity contrast of ∼103 orders of magnitude that offers better thermal stability than the majority of other phase transition alloys. Additionally, current-voltage (I-V) properties and voltage dependent threshold switching support an incredibly fast threshold switching operation. Switching is observed at 18–30 V and threshold voltage has been noticed to decrease (10–12 V) with increasing temperature. From XPS study, it can be observed that binding energy is shifting towards lower energies by 0.25 eV. Sc makes the GeTeSe parent material appealing for next-generation high-speed, non-volatile, and improved thermal stability memory applications. [Display omitted] • Electrical resistivity contrast of ∼103 orders of magnitude. • Better thermal stability than the majority of other phase transition alloys. • Switching is observed at 18-30 V and threshold voltage has been noticed to decrease (10-12 V) with increasing temperature. • The barrier-cluster model is used to interpret compensating effect in thermally controlled resistive switching and d.c. conduction. • Sc makes the GeTeSe appealing for next-generation high-speed, non-volatilememory applications. [ABSTRACT FROM AUTHOR]