Cite
Sub‐0.6 eV Inverted Metamorphic GaInAs Cells Grown on Inp and GaAs Substrates for Thermophotovoltaics and Laser Power Conversion.
MLA
Schulte, Kevin L., et al. “Sub‐0.6 EV Inverted Metamorphic GaInAs Cells Grown on Inp and GaAs Substrates for Thermophotovoltaics and Laser Power Conversion.” Advanced Energy Materials, vol. 14, no. 10, Mar. 2024, pp. 1–9. EBSCOhost, https://doi.org/10.1002/aenm.202303367.
APA
Schulte, K. L., Friedman, D. J., Dada, T., Guthrey, H. L., Costa, E. W., Tervo, E. J., France, R. M., Geisz, J. F., & Steiner, M. A. (2024). Sub‐0.6 eV Inverted Metamorphic GaInAs Cells Grown on Inp and GaAs Substrates for Thermophotovoltaics and Laser Power Conversion. Advanced Energy Materials, 14(10), 1–9. https://doi.org/10.1002/aenm.202303367
Chicago
Schulte, Kevin L., Daniel J. Friedman, Titilope Dada, Harvey L. Guthrey, Edgard W. Costa, Eric J. Tervo, Ryan M. France, John F. Geisz, and Myles A. Steiner. 2024. “Sub‐0.6 EV Inverted Metamorphic GaInAs Cells Grown on Inp and GaAs Substrates for Thermophotovoltaics and Laser Power Conversion.” Advanced Energy Materials 14 (10): 1–9. doi:10.1002/aenm.202303367.