Growth and Characterization of ß-HgS Thin Films by Annealing Hg 2+ -Dithiol Self-Assembled Multilayers.

Hg 2+ ‐dithiol self‐assembled multilayers were constructed by alternatively depositing mercury ion and 1, 6‐hexanedithiol. Cubic β‐HgS thin films were obtained by annealing the self‐assembled Hg 2+ ‐dithiol multilayers at 503 K for 2 h. The grain size was estimated to be 16 nm by use of the Scherrer formula from the XRD pattern. The HgS thin films showed a blue shift in band gap energy due to small grain size. The sheet resistance of the film was sensitive to UV light and the dark resistance was 4.84×10 4 Ω/ 2 . [ABSTRACT FROM AUTHOR]