Enhancement in Efficiency of Methyl Ammonium Tin Iodide-Based Perovskite Solar Cell Using SCAPS-1D.

Perovskite solar cells came to limelight owing to their simple fabrication processes, cost-effectiveness, better optoelectronic characteristics and outstanding power conversion efficiencies (PCEs). These solar cells have simply outpaced their rival cells since the alteration from aqueous hole transport layers (HTLs) to solid HTLs. Various layers of a perovskite cell viz. light absorber layer, electron transport layer (ETL) and HTL play a decisive role in ascertaining its performance. Today, various types of organic and inorganic HTLs are available but inorganic HTLs have gained an upper hand over their organic counterparts in terms of stability, cost, fabrication and material properties which represent them as a prospective candidate for optimum perovskite device. Copper antimony sulfide (CuSbS 2) is a common HTL available in abundance with the benefit of an adequate bandwidth of 1.54 eV. In addition, CuSbS2 possesses substantial band aligning and electron inhibiting features. This research paper elaborates a relative study of two perovskite solar devices possessing discrete inorganic hole transport layers, i.e., cuprous iodide (CuI) and copper antimony sulfide (CuSbS 2) , and discrete perovskite layers, i.e., MAPbI 3 − x Cl x and MASnI3, using the same negative charge transport layer, i.e., Cd 1 − x Zn x S, through numerical simulation employing SCAPS-1D. The effects of thickness, defect density and doping concentration with respect to absorbing layer on the efficiency and other parameters of perovskite layers are also discussed. By employing CuSbS2 with MASnI3 in the proposed device, the solar cell parameters are efficacious enough demonstrating the V oc of 1.10 V, PCE of 31.11%, fill factor (FF) of 83.05% and J sc of 33.75 mA ⋅ cm − 2 . A comparative analysis using SCAPS 1D software is carried out between two different HTLs, i.e., CuI and CuSbS2; between two different perovskite layers, i.e., CH3NH3PbI3–xClx and CH3NH3SnI3, exploiting the same ETL, i.e., Cd1–xZnxS. Power conversion efficiency, fill factor, short circuit current density and open circuit voltage of the proposed device are characterized by thickness, doping concentrations and interfacial defect density. By integrating CuSbS2 with CH3NH3SnI3 in the proposed cell, the outcome received is of high calibre as compared to the outcome of the existing one. [ABSTRACT FROM AUTHOR]