Cite
Si0.85Ge0.15 oxynitridation in wet-nitric oxide ambient
MLA
Dasgupta, Anindya, et al. “Si0.85Ge0.15 Oxynitridation in Wet-Nitric Oxide Ambient.” Microelectronic Engineering, vol. 77, no. 3/4, Apr. 2005, pp. 242–49. EBSCOhost, https://doi.org/10.1016/j.mee.2004.11.006.
APA
Dasgupta, A., Takoudis, C. G., Lei, Y., & Browning, N. D. (2005). Si0.85Ge0.15 oxynitridation in wet-nitric oxide ambient. Microelectronic Engineering, 77(3/4), 242–249. https://doi.org/10.1016/j.mee.2004.11.006
Chicago
Dasgupta, Anindya, Christos G. Takoudis, Yuanyuan Lei, and Nigel D. Browning. 2005. “Si0.85Ge0.15 Oxynitridation in Wet-Nitric Oxide Ambient.” Microelectronic Engineering 77 (3/4): 242–49. doi:10.1016/j.mee.2004.11.006.