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Effect of diborane on the microstructure of boron-doped silicon nanowires
- Source :
-
Journal of Crystal Growth . Apr2005, Vol. 277 Issue 1-4, p428-436. 9p. - Publication Year :
- 2005
-
Abstract
- Abstract: Boron-doped silicon (Si) nanowires, with nominal diameters of 80nm, were grown via the vapor–liquid–solid (VLS) mechanism using gold (Au) as a catalyst and silane (SiH4) and diborane (B2H6) as precursors. The microstructure of the nanowires was studied by scanning electron microscopy, transmission electron microscopy and electron energy-loss spectroscopy. At lower B2H6 partial pressure and thus lower doping levels (⩽1×1018 cm−3), most of the boron-doped Si nanowires exhibited high crystallinity. At higher B2H6 partial pressure (∼2×1019 cm−3 doping level), the majority of the wires exhibited a core–shell structure with an amorphous Si shell (20–30nm thick) surrounding a crystalline Si core. Au nanoparticles on the outer surface of the nanowires were also observed in structures grown with high B/Si gas ratios. The structural changes are believed to result from an increase in the rate of Si thin-film deposition on the outer surface of the nanowire at high B2H6 partial pressure, which produces the amorphous coating and also causes an instability at the liquid/solid interface resulting in a loss of Au during nanowire growth. [Copyright &y& Elsevier]
- Subjects :
- *BORON
*MICROSTRUCTURE
*SILICON
*NANOWIRES
Subjects
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 277
- Issue :
- 1-4
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 17640281
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2005.01.091