Structural, morphological, and capacitive studies of nano and micro zinc oxide for MOS capacitor application.

In modern days, electrical and electronic systems use capacitors in various ways. It's very rare for an electrical product not to contain a capacitor. Metal oxide semiconductor (MOS) capacitors are a good energy source in modern times due to their special properties. A metal oxide semiconductor (MOS) capacitor consists of a substrate, Indium-Tin Oxide (ITO), and the conducting side of this Indium-Tin Oxide (ITO) is coated with an efficient metal oxide (like Silicon dioxide (SiO2), Zinc oxide (ZnO)). Zinc oxide is among the most viable metal oxide semiconductors because of its large band gap. In this report we mainly focus on the structural, vibrational, and morphological study of Zinc oxide (ZnO). To synthesize and characterize the zinc oxide nanostructure, we utilize the most feasible method possible, which is the sol-gel method. The research mainly centers on the comparison study between the Nano and microparticles of Zinc oxide (ZnO) and metal oxide semiconductor (MOS) capacitor applications of both. [ABSTRACT FROM AUTHOR]