Ferroelectric polycrystalline Bi2SiO5 thin films on Pt-covered Si substrates prepared by pulsed laser deposition combined with post-annealing.

In this study, we report on the fabrication of polycrystalline thin film Bi 2 SiO 5 , a notable non-perovskite ferroelectric material. The thin films were deposited on Pt-covered Si substrates by pulsed laser deposition (PLD) at room temperature, followed by a post-annealing process in air. The as-deposited thin film was of an amorphous phase of Bi-Si-O, and turned to a polycrystalline phase of Bi 2 SiO 5 by the post-annealing above 550°C. The influences of the post-annealing temperature on the phase preference, surface morphology, and dielectric properties of the thin films were investigated by Raman spectroscopy, X-ray diffraction (XRD), atomic force microscopy (AFM), and dielectric measurements. As a result, the optimal post-annealing temperature was determined to be 600°C, yielding a good ferroelectric polycrystalline Bi 2 SiO 5 thin film with a relative dielectric constant of 143 and a remanent polarization (2 P r) of 7.2 μC cm−2. • Polycrystalline Bi 2 SiO 5 thin films fabricated by PLD with post-annealing. • As-deposited amorphous Bi-Si-O thin films crystalized by post-annealing above 550 °C. • Post-annealing temperature affects crystallization, roughness, and dielectric properties. • Remanent polarization (2 P r) of 7.2 μC cm−2 was obtained by post-annealing at 600 °C. [ABSTRACT FROM AUTHOR]