Cite
Sulfur defect–engineered Bi2S3–x/In2S3–y mediated signal enhancement of photoelectrochemical sensor for lead ions detection.
MLA
Ren, Xiang, et al. “Sulfur Defect–engineered Bi2S3–x/In2S3–y Mediated Signal Enhancement of Photoelectrochemical Sensor for Lead Ions Detection.” Talanta, vol. 273, June 2024, p. N.PAG. EBSCOhost, https://doi.org/10.1016/j.talanta.2024.125871.
APA
Ren, X., Wang, M., Chen, J., Zhao, J., Wang, H., Wu, D., Xu, R., Zhang, Y., Ju, H., & Wei, Q. (2024). Sulfur defect–engineered Bi2S3–x/In2S3–y mediated signal enhancement of photoelectrochemical sensor for lead ions detection. Talanta, 273, N.PAG. https://doi.org/10.1016/j.talanta.2024.125871
Chicago
Ren, Xiang, Man Wang, Jingui Chen, Jinxiu Zhao, Huan Wang, Dan Wu, Rui Xu, Yong Zhang, Huangxian Ju, and Qin Wei. 2024. “Sulfur Defect–engineered Bi2S3–x/In2S3–y Mediated Signal Enhancement of Photoelectrochemical Sensor for Lead Ions Detection.” Talanta 273 (June): N.PAG. doi:10.1016/j.talanta.2024.125871.