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Comparative analysis of performance and its stability against real-time non-ideal conditions between DG-TFET sensor and its MOS equivalent for a range of biomolecule detection: a design perspective.

Authors :
Malakar, Sudip
Gayen, Sanu
Tewari, Suchismita
Chattopadhyay, Avik
Source :
AEU: International Journal of Electronics & Communications. Apr2024, Vol. 177, pN.PAG-N.PAG. 1p.
Publication Year :
2024

Abstract

• Design guidelines for a unique double-gated TFET-based biosensor (DG-TFET-BS) • Identifying main factor(s) affecting DG-TFET-BS performance with < 100 % fill-factor. • Projected DG-TFET-BS outperforming its MOS counterpart (MES) in sensing performance. • Capturing the change in biomolecule properties (k-value, diameter) with temperature. • More stability of MES against temperature and position variability than DG-TFET-BS. In this paper, marking the first instance, we introduce design guidelines for a unique double-gate TFET-based biosensor, considering the practical aspect of a non-100% fill-factor in the nanogap cavity, facilitating the successful conjugation and detection of diverse biomolecules with varying diameters and k-values. Throughout our study, we have sought to identify the most influential parameter(s) among k-value, fill-factor, and gate-oxide thickness, impacting the biosensor's sensing performance. Intriguingly, we have discovered that the complex interplay of electrostatics in the device is governed by a collective effect of these parameters, affecting sensing performance. Nevertheless, optimizing the nanogap cavity thickness is a trade-off between performance and fabrication complexity. Subsequently, we have conducted a comparison between the proposed biosensor and its MOS counterpart, evaluating their sensitivity, and stability against temperature fluctuation and position variability. While the projected TFET-based biosensor excels in sensitivity, it lags in the latter two aspects, making the choice between the two types of biosensors application-specific. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
14348411
Volume :
177
Database :
Academic Search Index
Journal :
AEU: International Journal of Electronics & Communications
Publication Type :
Academic Journal
Accession number :
176470606
Full Text :
https://doi.org/10.1016/j.aeue.2024.155242