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Comparative analysis of performance and its stability against real-time non-ideal conditions between DG-TFET sensor and its MOS equivalent for a range of biomolecule detection: a design perspective.
- Source :
-
AEU: International Journal of Electronics & Communications . Apr2024, Vol. 177, pN.PAG-N.PAG. 1p. - Publication Year :
- 2024
-
Abstract
- • Design guidelines for a unique double-gated TFET-based biosensor (DG-TFET-BS) • Identifying main factor(s) affecting DG-TFET-BS performance with < 100 % fill-factor. • Projected DG-TFET-BS outperforming its MOS counterpart (MES) in sensing performance. • Capturing the change in biomolecule properties (k-value, diameter) with temperature. • More stability of MES against temperature and position variability than DG-TFET-BS. In this paper, marking the first instance, we introduce design guidelines for a unique double-gate TFET-based biosensor, considering the practical aspect of a non-100% fill-factor in the nanogap cavity, facilitating the successful conjugation and detection of diverse biomolecules with varying diameters and k-values. Throughout our study, we have sought to identify the most influential parameter(s) among k-value, fill-factor, and gate-oxide thickness, impacting the biosensor's sensing performance. Intriguingly, we have discovered that the complex interplay of electrostatics in the device is governed by a collective effect of these parameters, affecting sensing performance. Nevertheless, optimizing the nanogap cavity thickness is a trade-off between performance and fabrication complexity. Subsequently, we have conducted a comparison between the proposed biosensor and its MOS counterpart, evaluating their sensitivity, and stability against temperature fluctuation and position variability. While the projected TFET-based biosensor excels in sensitivity, it lags in the latter two aspects, making the choice between the two types of biosensors application-specific. [ABSTRACT FROM AUTHOR]
- Subjects :
- *BIOMOLECULES
*COMPARATIVE studies
*BIOSENSORS
*DETECTORS
*ELECTROSTATICS
Subjects
Details
- Language :
- English
- ISSN :
- 14348411
- Volume :
- 177
- Database :
- Academic Search Index
- Journal :
- AEU: International Journal of Electronics & Communications
- Publication Type :
- Academic Journal
- Accession number :
- 176470606
- Full Text :
- https://doi.org/10.1016/j.aeue.2024.155242