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Optical and scintillation properties of Er-doped La3Ga5SiO14 single crystals emitting near-infrared photons.

Authors :
Okazaki, Kai
Nakauchi, Daisuke
Kato, Takumi
Kawaguchi, Noriaki
Yanagida, Takayuki
Source :
Radiation Physics & Chemistry. Jul2024, Vol. 220, pN.PAG-N.PAG. 1p.
Publication Year :
2024

Abstract

0.5, 1, 2, and 5% Er-doped La 3 Ga 5 SiO 14 (LGS) single crystals were synthesized by the Floating Zone method and the photoluminescence (PL) and scintillation properties were characterized. Emission peaks appeared at visible–near-infrared (NIR) regions. Their spectral features matched with those due to the 4f–4f transitions of Er3+. The PL quantum yields of 0.5, 1, 2, and 5% Er-doped samples were respectively 45.0, 73.3, 82.5, and 69.4%. The decay times due to the 2H 9/2 –4I 15/2 transitions of Er3+ were obtained when visible ranges were monitored under excitation of both visible lights and X-rays. All the prepared samples showed good linearity between the X-ray exposure dose rate and scintillation signals in NIR ranges. The best lower detection limit in prepared samples was 5 mGy/h recorded by the 2% Er-doped LGS. • Er-doped La 3 Ga 5 SiO 14 single crystals were synthesized by the Floating zone method. • Luminescence due to 4f–4f transitions of Er3+ was observed in both visible and near-infrared regions. • Quantum yields of 0.5, 1, 2, and 5% Er-doped samples were respectively 45.0, 73.7, 82.5, and 69.4%. • The best lower detection limit in prepared samples was 5 mGy/h obtained by 2% Er-doped sample. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
0969806X
Volume :
220
Database :
Academic Search Index
Journal :
Radiation Physics & Chemistry
Publication Type :
Academic Journal
Accession number :
176500470
Full Text :
https://doi.org/10.1016/j.radphyschem.2024.111700