Cite
High mobility and hysteresis free InGaSnO thin film transistors by co-sputtering via low temperature post annealing process.
MLA
Song, Zengcai, et al. “High Mobility and Hysteresis Free InGaSnO Thin Film Transistors by Co-Sputtering via Low Temperature Post Annealing Process.” Thin Solid Films, vol. 795, Apr. 2024, p. N.PAG. EBSCOhost, https://doi.org/10.1016/j.tsf.2024.140309.
APA
Song, Z., Hu, M., Zhang, X., Zhu, Z., Luo, S., & Xu, L. (2024). High mobility and hysteresis free InGaSnO thin film transistors by co-sputtering via low temperature post annealing process. Thin Solid Films, 795, N.PAG. https://doi.org/10.1016/j.tsf.2024.140309
Chicago
Song, Zengcai, Mengzhen Hu, Xinnan Zhang, Zhihua Zhu, Shijun Luo, and Lei Xu. 2024. “High Mobility and Hysteresis Free InGaSnO Thin Film Transistors by Co-Sputtering via Low Temperature Post Annealing Process.” Thin Solid Films 795 (April): N.PAG. doi:10.1016/j.tsf.2024.140309.