Highly Nonlinear Memory Selectors with Ultrathin MoS2/WSe2/MoS2 Heterojunction.

Resistive random access memory (RRAM) crossbar arrays require the highly nonlinear selector with high current density to address a specific memory cell and suppress leakage current through the unselected cell. 3D monolithic integration of RRAM array requires selector devices with a small footprint and low‐temperature processing for ultrahigh‐density data storage. Here, an ultrathin two‐terminal n‐p‐n selector with 2D transition metal dichalcogenides (TMDs) is designed by a low‐temperature transfer method. The van der Waals contact between transferred Au electrodes and TMDs reduces the Fermi level pinning and retains the intrinsic transport behavior of TMDs. The selector with a single type of TMD exhibits a trade‐off between current density and nonlinearity depending on the barrier height. By tuning the Schottky barrier height and controlling the thickness of p‐type WSe2 in MoS2/WSe2/MoS2 n‐p‐n selector for a punch‐through transport, the selector shows high nonlinearity (≈ 230) and high current density (2 × 103 A cm−2) simultaneously. The n‐p‐n selectors are further integrated with a bipolar hexagonal boron nitride memory and calculate the maximum crossbar size of the 2D material‐based one‐selector one‐resistor according to a 10% read margin, which offers the possible realization of future 3D monolithic integration. [ABSTRACT FROM AUTHOR]