Graphdiyne particles as nano-floating gates for high-performance nonvolatile organic field-effect transistor memory.

Graphdiyne particles (GDYP), newcomers of carbon family, were employed as nano-floating gates in organic field-effect transistor (OFET) memories. The charge-trapping layer was prepared by blending GDYP into a polystyrene (PS) matrix. The effect of GDYP doping ratio on memory performances was investigated, and the OFET memory with the optimal doping concentration of the GDYP (0.3 mg/mL) exhibits ambipolar memory behavior with a wide memory window as large as 86 V, excellent retention time over 104 s with a high ON/OFF current ratio of 7.5 × 105. This work demonstrates that graphdiyne is a promising charge-trapping material for high-performance nonvolatile OFET memory devices. [Display omitted] • Graphdiyne particles were employed as nano-floating-gate materials for nonvolatile OFET memory. • The effect of graphdiyne particles doping ratio on memory performances was systematically investigated. • The as fabricated OFET exhibits bipolar memory behavior, memory window up to 86 V, retention time over 104 s with ON/OFF current ratio of 7.5 × 105. • Graphdiyne particle is a promising charge trapping material. [ABSTRACT FROM AUTHOR]