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A ternary gate-connected threshold switching thin-film transistor.
- Source :
-
Applied Physics Letters . 4/8/2024, Vol. 124 Issue 15, p1-4. 4p. - Publication Year :
- 2024
-
Abstract
- Multi-valued logic has been a significant focus of research in various fields with the advancement of information technology. One approach to realizing ternary logic is integrating of a threshold switching (TS) device with a transistor, but this method often entails a complex fabrication process. This work suggests a ternary gate-connected threshold switching thin-film transistor (TS-TFT) by serially connecting the TS device with a bottom-gate thin-film transistor (TFT). The fabrication process is simplified with a structure that shares electrodes and insulators. Different threshold voltages from TS and TFT devices produce stable multiple states. The Pt/HfO2/TiN TS device has an electronic trapping/detrapping switching mechanism that exhibits low power consumption and high reliability. With the superior electrical performance of an amorphous indium gallium zinc oxide TFT, the TS-TFT has stable endurance. Furthermore, pulse switching and ternary inverter are demonstrated from the practical point of view. [ABSTRACT FROM AUTHOR]
- Subjects :
- *INDIUM gallium zinc oxide
*TRANSISTORS
*INFORMATION technology
*THRESHOLD voltage
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 124
- Issue :
- 15
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 176579154
- Full Text :
- https://doi.org/10.1063/5.0187155