Cite
Publisher's Note: "Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors" [Appl. Phys. Lett. 123, 262107 (2023)].
MLA
Wang, Yingjie, et al. “Publisher’s Note: ‘Polarization Enhanced Two-Dimensional Hole Gas in III-Nitride Heterostructures for Cryogenically Operated GaN-Based p-Channel Field Effect Transistors’ [Appl. Phys. Lett. 123, 262107 (2023)].” Applied Physics Letters, vol. 124, no. 15, Apr. 2024, p. 1. EBSCOhost, https://doi.org/10.1063/5.0212421.
APA
Wang, Y., Huang, S., Jiang, Q., Wang, X., Ji, Z., Fan, J., Yin, H., Wei, K., Liu, X., Sun, Q., & Chen, K. J. (2024). Publisher’s Note: “Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors” [Appl. Phys. Lett. 123, 262107 (2023)]. Applied Physics Letters, 124(15), 1. https://doi.org/10.1063/5.0212421
Chicago
Wang, Yingjie, Sen Huang, Qimeng Jiang, Xinhua Wang, Zhongchen Ji, Jie Fan, Haibo Yin, et al. 2024. “Publisher’s Note: ‘Polarization Enhanced Two-Dimensional Hole Gas in III-Nitride Heterostructures for Cryogenically Operated GaN-Based p-Channel Field Effect Transistors’ [Appl. Phys. Lett. 123, 262107 (2023)].” Applied Physics Letters 124 (15): 1. doi:10.1063/5.0212421.