Cite
Material removal characteristic of single abrasive scratching 4H–SiC crystal with different crystal surface.
MLA
Li, Jun, et al. “Material Removal Characteristic of Single Abrasive Scratching 4H–SiC Crystal with Different Crystal Surface.” Materials Science in Semiconductor Processing, vol. 177, July 2024, p. N.PAG. EBSCOhost, https://doi.org/10.1016/j.mssp.2024.108382.
APA
Li, J., Zhao, H., Gao, X., He, L., & Zhou, D. (2024). Material removal characteristic of single abrasive scratching 4H–SiC crystal with different crystal surface. Materials Science in Semiconductor Processing, 177, N.PAG. https://doi.org/10.1016/j.mssp.2024.108382
Chicago
Li, Jun, Hongyan Zhao, Xiujuan Gao, Lei He, and Daqing Zhou. 2024. “Material Removal Characteristic of Single Abrasive Scratching 4H–SiC Crystal with Different Crystal Surface.” Materials Science in Semiconductor Processing 177 (July): N.PAG. doi:10.1016/j.mssp.2024.108382.