Tunable zero-field magnetoresistance responses in Si transistors: Origins and applications.

MLA

Moxim, Stephen J., et al. “Tunable Zero-Field Magnetoresistance Responses in Si Transistors: Origins and Applications.” Journal of Applied Physics, vol. 135, no. 15, Apr. 2024, pp. 1–10. EBSCOhost, https://doi.org/10.1063/5.0203331.

APA

Moxim, S. J., Harmon, N. J., Myers, K. J., Ashton, J. P., Frantz, E. B., Flatté, M. E., Lenahan, P. M., & Ryan, J. T. (2024). Tunable zero-field magnetoresistance responses in Si transistors: Origins and applications. Journal of Applied Physics, 135(15), 1–10. https://doi.org/10.1063/5.0203331

Chicago

Moxim, Stephen J., Nicholas J. Harmon, Kenneth J. Myers, James P. Ashton, Elias B. Frantz, Michael E. Flatté, Patrick M. Lenahan, and Jason T. Ryan. 2024. “Tunable Zero-Field Magnetoresistance Responses in Si Transistors: Origins and Applications.” Journal of Applied Physics 135 (15): 1–10. doi:10.1063/5.0203331.