Ge doping of α-Ga2O3 thin films via mist chemical vapor deposition and their application in Schottky barrier diodes.

MLA

Wakamatsu, Takeru, et al. “Ge Doping of α-Ga2O3 Thin Films via Mist Chemical Vapor Deposition and Their Application in Schottky Barrier Diodes.” Journal of Applied Physics, vol. 135, no. 15, Apr. 2024, pp. 1–8. EBSCOhost, https://doi.org/10.1063/5.0207432.

APA

Wakamatsu, T., Isobe, Y., Takane, H., Kaneko, K., & Tanaka, K. (2024). Ge doping of α-Ga2O3 thin films via mist chemical vapor deposition and their application in Schottky barrier diodes. Journal of Applied Physics, 135(15), 1–8. https://doi.org/10.1063/5.0207432

Chicago

Wakamatsu, Takeru, Yuki Isobe, Hitoshi Takane, Kentaro Kaneko, and Katsuhisa Tanaka. 2024. “Ge Doping of α-Ga2O3 Thin Films via Mist Chemical Vapor Deposition and Their Application in Schottky Barrier Diodes.” Journal of Applied Physics 135 (15): 1–8. doi:10.1063/5.0207432.