Achieving Superior Thermoelectric Performance in Ge4Se3Te via Symmetry Manipulation with I–V–VI2 Alloying.

Although orthorhombic GeSe is predicted to have an ultrahigh figure of merit, ZT ≈ 2.5, up to now, the highest experimental value is ≈0.2 due to the low carrier concentration (nH ≈ 1018 cm−3). Improving symmetry is an effective approach for enhancing the ZT of GeSe‐based materials. With Te‐alloying, Ge4Se3Te displays the two‐dimensional hexagonal structure and high nH ≈ 1.23 × 1021 cm−3. Interestingly, Ge4Se3Te transformed from the hexagonal into the rhombohedral phase with only ≈2% I–V–VI2‐alloying (I = Li, Na, K, Cu, Ag; V = Sb, Bi; VI = Se, Te). According to the calculated results of Ge0.82Ag0.09Bi0.09Se0.614Te0.386 single‐crystal grown via AgBiTe2‐alloying, it exhibits a higher valley degeneracy than the hexagonal Ge4Se3Te. For instance, AgBiTe2‐alloying induces a strong band convergence and band inversion effect, resulting in a significantly enhanced Seebeck coefficient and power factor with a similar nH from 17 µV K−1 and 0.63 µW cm−1 K−2 for pristine Ge4Se3Te to 124 µV K−1 and 5.97 µW cm−1 K−2 for 12%AgBiTe2‐alloyed sample, respectively. Moreover, the sharply reduced phonon velocity, nano‐domain wall structure, and strong anharmonicity lead to low lattice thermal conductivity. As a result, a record‐high average ZT ≈0.95 over 323–773 K with an excellent ZT ≈ 1.30 is achieved at 723 K. [ABSTRACT FROM AUTHOR]