n/p and p/n InGaAs cells for high density TPV modules.

Designing TPV modules using smaller area cells contributes to mitigating the series resistance losses caused by the large currents typically handled. However, the areal losses caused by the larger number of interconnections required challenge the design of high compacity modules, which is necessary to maximize the output power density or the TPV efficiency. Here we propose using series connected n/p and p/n cells to minimize the areal losses, attain high compacity modules and facilitate the manufacturing of the interconnections. This approach relies on attaining high performance TPV cells of both polarities. We demonstrate state-of-the-art InGaAs n/p cells, and a matching performance, in terms of J SC and V OC , in p/n cells. We assess the effect of the higher emitter sheet resistance in the p/n design, caused by the low mobility of holes in InGaAs. A minimal TPV efficiency loss is projected by using higher shadowing factors that have a reduced impact on the TPV efficiency thanks to the ability to recycle photons reflected at the front metal. Furthermore, this small loss could be offset, and the overall TPV efficiency significantly improved, by the higher compacity achievable in these modules. • TPV module design arrangement enabling high compacity and simpler manufacturing proposed. • Series connection of n/p and p/n InGaAs cells minimizes interconnection and areal losses. • n/p and p/n InGaAs TPV cells with matching EQE and V OC but higher emitter sheet resistance implemented. • Larger shadow factor losses in p/n design affect minimally the TPV efficiency thanks to the high front grid reflectivity. • Lower areal losses attainable should offset the projected losses introduced by the p/n cells and enable higher TPV efficiencies in final modules. [ABSTRACT FROM AUTHOR]