Cite
Novel high-voltage GaN CAVET with high threshold voltage and low reverse conduction loss.
MLA
Luo, Chengtao, et al. “Novel High-Voltage GaN CAVET with High Threshold Voltage and Low Reverse Conduction Loss.” Microelectronics Journal, vol. 148, June 2024, p. N.PAG. EBSCOhost, https://doi.org/10.1016/j.mejo.2024.106195.
APA
Luo, C., Yang, C., Zhao, Z., Xie, X., Wei, Y., Wei, J., Shen, J., Qiu, J., & Luo, X. (2024). Novel high-voltage GaN CAVET with high threshold voltage and low reverse conduction loss. Microelectronics Journal, 148, N.PAG. https://doi.org/10.1016/j.mejo.2024.106195
Chicago
Luo, Chengtao, Cheng Yang, Zhijia Zhao, Xintong Xie, YuXi Wei, Jie Wei, Jingyu Shen, Jinpeng Qiu, and Xiaorong Luo. 2024. “Novel High-Voltage GaN CAVET with High Threshold Voltage and Low Reverse Conduction Loss.” Microelectronics Journal 148 (June): N.PAG. doi:10.1016/j.mejo.2024.106195.