Thermally stable Mo-Co-B thin film metallic glass as a potential diffusion barrier in Cu/Si contact system.

Thin film metallic glass (TFMG) has demonstrated significant potential for applications in the semiconductor industry. In this work, fully amorphous Mo-Co-B thin films with a smooth surface and dense microstructure were prepared through magnetron sputtering. The thermal stability and diffusion barrier performance of the Mo-based TFMG were evaluated through vacuum annealing at temperatures ranging from 300 to 800 °C for 30 min. Nanoindentation tests were conducted to investigate the evolution of mechanical properties with annealing for the Mo-based thin film. When subjected to annealing at temperatures below 700 °C, the Mo-based thin film retained its fully amorphous structure. It displayed enhanced hardness and Young's modulus due to the annihilation of free volume with annealing. Increasing the annealing temperature to 700 °C and 800 °C resulted in surface oxidation and crystallization of the Mo-based TFMG, respectively, leading to a continuous decline in its mechanical properties. When employed as the diffusion barrier between Cu and Si, the Mo-based barrier layer effectively blocked the diffusion of Cu atoms through the barrier at temperatures below 800 °C. The failure of the barrier occurred at 800 °C due to the crystallization of the amorphous phase. Such excellent diffusion barrier performance of the thermally stable Mo-Co-B TFMG makes it a promising candidate as the barrier material in Cu metallization. • Mo-based thin film metallic glasses with a dense microstructure were prepared by magnetron sputtering. • The thin film exhibits high thermal stability during vacuum annealing. • As a diffusion barrier in Cu/Si contact system, the thin film can effectively suppress Cu diffusion below 800 °C. • The failure of the barrier at 800 °C is dominated by the crystallization of the amorphous phase. [ABSTRACT FROM AUTHOR]