Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation.

MLA

Uedono, Akira, et al. “Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation.” Physica Status Solidi (B), vol. 261, no. 5, May 2024, pp. 1–10. EBSCOhost, https://doi.org/10.1002/pssb.202400060.

APA

Uedono, A., Tanaka, R., Takashima, S., Ueno, K., Edo, M., Shima, K., Chichibu, S. F., Uzuhashi, J., Ohkubo, T., Ishibashi, S., Sierakowski, K., & Bockowski, M. (2024). Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation. Physica Status Solidi (B), 261(5), 1–10. https://doi.org/10.1002/pssb.202400060

Chicago

Uedono, Akira, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Kohei Shima, Shigefusa F. Chichibu, et al. 2024. “Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation.” Physica Status Solidi (B) 261 (5): 1–10. doi:10.1002/pssb.202400060.