Cite
Low‐Power Crystallization Process in In3SbTe2 Phase Change Memory Devices with Thin Oxide Layer.
MLA
Pathak, Anushmita, and Shivendra Kumar Pandey. “Low‐Power Crystallization Process in In3SbTe2 Phase Change Memory Devices with Thin Oxide Layer.” Physica Status Solidi (B), vol. 261, no. 5, May 2024, pp. 1–5. EBSCOhost, https://doi.org/10.1002/pssb.202400081.
APA
Pathak, A., & Pandey, S. K. (2024). Low‐Power Crystallization Process in In3SbTe2 Phase Change Memory Devices with Thin Oxide Layer. Physica Status Solidi (B), 261(5), 1–5. https://doi.org/10.1002/pssb.202400081
Chicago
Pathak, Anushmita, and Shivendra Kumar Pandey. 2024. “Low‐Power Crystallization Process in In3SbTe2 Phase Change Memory Devices with Thin Oxide Layer.” Physica Status Solidi (B) 261 (5): 1–5. doi:10.1002/pssb.202400081.