A Threshold Voltage Deviation Monitoring Scheme of Bit Transistors in 6T SRAM for Manufacturing Defects Detection.

MLA

Liu, Rui, et al. “A Threshold Voltage Deviation Monitoring Scheme of Bit Transistors in 6T SRAM for Manufacturing Defects Detection.” IEEE Transactions on Semiconductor Manufacturing, vol. 37, no. 2, May 2024, pp. 146–51. EBSCOhost, https://doi.org/10.1109/TSM.2024.3387050.

APA

Liu, R., Li, H., Yang, Z., Wang, G., Chen, Z., & Zhang, P. (2024). A Threshold Voltage Deviation Monitoring Scheme of Bit Transistors in 6T SRAM for Manufacturing Defects Detection. IEEE Transactions on Semiconductor Manufacturing, 37(2), 146–151. https://doi.org/10.1109/TSM.2024.3387050

Chicago

Liu, Rui, Hao Li, Zhao Yang, Guantao Wang, Zefu Chen, and Peiyong Zhang. 2024. “A Threshold Voltage Deviation Monitoring Scheme of Bit Transistors in 6T SRAM for Manufacturing Defects Detection.” IEEE Transactions on Semiconductor Manufacturing 37 (2): 146–51. doi:10.1109/TSM.2024.3387050.