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Research on the Absorption Performance of Silicon-Based Pyramidal Microstructure with Ultra-Low Reflectivity.
- Source :
-
NANO . Feb2024, Vol. 19 Issue 2, p1-7. 7p. - Publication Year :
- 2024
-
Abstract
- Anti-reflective structure can effectively suppress the light reflection on the surface of the object, thereby increasing the absorption of light, it has a wide range of applications in photovoltaics, such as optical sensors and photodetectors. Due to the limitation of low refractive index materials, it is difficult for existing anti-reflective coatings to achieve the expected low reflectance effect. Based on Maxwell's electromagnetic wave theory, this paper uses Finite-Difference Time-Domain (FDTD)-solutions software to research the reflection spectrum of silicon-based pyramidal microstructure in the wavelength range of 200–1400nm, explores the influence of the height (H) and bottom side length (L) of the pyramidal on its reflection spectrum, and studies the changes of its electromagnetic field. On this basis, the absorption performance of the silicon-based pyramidal microstructure is further studied, and it is found that the absorption efficiency of silicon-based pyramidal microstructure for ultraviolet light reaches almost 100%, which provides important significance for its application in optical sensors and photodetectors. Anti-reflective structures are capable of significantly reducing light reflection on object surfaces, thereby minimizing optical losses. This study explores silicon-based pyramidal microstructures that demonstrate superior anti-reflective characteristics, with near-negligible reflection in the ultraviolet spectrum, approaching ideal absorption. The reliability of the absorption formula is confirmed through an analysis of the electric field properties. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 17932920
- Volume :
- 19
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- NANO
- Publication Type :
- Academic Journal
- Accession number :
- 177113309
- Full Text :
- https://doi.org/10.1142/S1793292023501060