Investigation of structural, dielectric and optical properties of the (Bi0.5La0.5Fe)0.5(Bi0.5Na0.5Ti)0.5O3perovskite for some electronic devices.

This paper outlines the investigation of structural, dielectric, complex impedance and optical properties of lanthanum-modified (Bi0.5La0.5Fe)0.5(Bi0.5Na0.5Ti)0.5O3 (BLF–BNT) single perovskite oxide synthesized by conventional solid-state reaction method. From Rietveld refinement, the crystal structure of the BLF–BNT ceramic has confirmed a tetragonal and the estimated average crystallite size is found to be 43.6nm. The dielectric properties of the La-doped BLF–BNT ceramic reveal the presence of Maxwell–Wagner-type dielectric dispersion. This suggests the occurrence of charge accumulation at grain boundaries and interfaces within the material. The complex impedance and complex electric modulus studies were employed to gain insight into the microscopic dielectric relaxations and conduction processes of the material. The electric modulus spectroscopy reveals the existence of nonDebye-type relaxation processes, including localized and long-range relaxation processes. The Nyquist and Cole–Cole plots show the semiconducting nature of the BLF–BNT ceramic. With the help of the Arrhenius method based on the imaginary portion of the electrical impedance and modulus, activation energies and relaxation times have been estimated. These parameters contribute to a deeper understanding of the electrical properties and conduction mechanisms within the material. Further, Raman spectroscopy, a nondestructive chemical analysis technique, was conducted to confirm the composition and structural integrity of the proposed system through its atomic vibrations. Also, the bandgap energy of the material has been estimated using Tauc’s relation and is found to be 1.69eV.This signifies that the BLF–BNT ceramic possesses a suitable bandgap for certain device applications, making it a promising candidate in various technological fields. Moreover, the overall comprehensive study of the proposed ceramic provides valuable insight and opens new possibilities for its potential applications in various electronic devices. [ABSTRACT FROM AUTHOR]