Nonvolatile ferroelectric resistive switching in α-In2Se3(2H) ferroelectric semiconductor junctions.

Emerging two-dimensional van der Waals (vdW) based ferroelectric semiconductor junctions (FSJs) are promising for low-power and high-density applications. In this work, we report the vdW α -In 2 Se 3 (2H) based FSJs of different metal-In 2 Se 3 interfaces. All vertical devices emerge with the nonvolatile ferroelectric resistive switching behavior. The Cr/ α -In 2 Se 3 (2H)/Au FSJs show a typical ferroelectric resistive switching behavior under ∼1.0 V applied voltage. The switching voltage of the Ag/ α -In 2 Se 3 (2H)/Au FSJs could be further decreased from 1.0 V to 0.8 V because of Ag migrations and ferroelectric reversal. Further, by optimizing the metal-In 2 Se 3 interfaces, the Ag/ α -In 2 Se 3 (2H)/Pt FSJs exhibit the ultralow switching voltage (∼0.3 V), excellent endurance (>225 cycles) and retention (>1 × 104 s). The results suggest that vdW α -In 2 Se 3 (2H) ferroelectric has great potential for low-power memristive devices. • The two-dimensional van der Waals α -In 2 Se 3 (2H) based ferroelectric semiconductor junctions of different metal-In 2 Se 3 interfaces are fabricate. • The ferroelectric semiconductor junctions with the nonvolatile ferroelectric resistive switching behavior was studied. • The Ag migrations combined with ferroelectric reversal mechanism in α -In 2 Se 3 (2H) based ferroelectric semiconductor junctions was studied. [ABSTRACT FROM AUTHOR]