Impurities in 4H silicon carbide: Site preference, lattice distortion, solubility, and charge transition levels.

MLA

Huang, Yuanchao, et al. “Impurities in 4H Silicon Carbide: Site Preference, Lattice Distortion, Solubility, and Charge Transition Levels.” Journal of Applied Physics, vol. 135, no. 19, May 2024, pp. 1–10. EBSCOhost, https://doi.org/10.1063/5.0190242.

APA

Huang, Y., Wang, R., Yang, D., & Pi, X. (2024). Impurities in 4H silicon carbide: Site preference, lattice distortion, solubility, and charge transition levels. Journal of Applied Physics, 135(19), 1–10. https://doi.org/10.1063/5.0190242

Chicago

Huang, Yuanchao, Rong Wang, Deren Yang, and Xiaodong Pi. 2024. “Impurities in 4H Silicon Carbide: Site Preference, Lattice Distortion, Solubility, and Charge Transition Levels.” Journal of Applied Physics 135 (19): 1–10. doi:10.1063/5.0190242.