Cite
High-performance and low-power consumption deep UV photodetectors based on MOCVD-grown ZnGa2O4epilayers with high temperature functionality.
MLA
Khan, Taslim, et al. “High-Performance and Low-Power Consumption Deep UV Photodetectors Based on MOCVD-Grown ZnGa2O4epilayers with High Temperature Functionality.” Materials Science in Semiconductor Processing, vol. 179, Aug. 2024, p. N.PAG. EBSCOhost, https://doi.org/10.1016/j.mssp.2024.108418.
APA
Khan, T., Sheoran, H., Tarntair, F.-G., Horng, R.-H., & Singh, R. (2024). High-performance and low-power consumption deep UV photodetectors based on MOCVD-grown ZnGa2O4epilayers with high temperature functionality. Materials Science in Semiconductor Processing, 179, N.PAG. https://doi.org/10.1016/j.mssp.2024.108418
Chicago
Khan, Taslim, Hardhyan Sheoran, Fu-Gow Tarntair, Ray-Hua Horng, and Rajendra Singh. 2024. “High-Performance and Low-Power Consumption Deep UV Photodetectors Based on MOCVD-Grown ZnGa2O4epilayers with High Temperature Functionality.” Materials Science in Semiconductor Processing 179 (August): N.PAG. doi:10.1016/j.mssp.2024.108418.