Emission of ions and electrons correlated with soft and hard x-rays evolution from thermal plasma.

This paper presents a correlation between time evolution of ions and electrons with soft and hard x-rays emitted from argon plasma. The plasma setup comprises of two copper electrodes connected with a dc power supply. Faraday cups were used to monitor time evolution of ions, to extract their energy, temperature, and flux. Double Langmuir probe was employed to determine electron temperature, energy, and density. To explore time-resolved emission of soft x-rays, PIN photodiodes filtered with 24 μm aluminum, 90 μm Mylar, 80 μm copper, and 10 μm silver have been used. To evaluate temporal evolution of hard x-rays, a scintillator–photomultiplier system was utilized. The plasma was generated using argon gas at atmospheric pressure 760 Torr and constant flow rate 5 L/min at 7, 9, and 11 kV. The flux, energy, and temperature of Ar ions increase with the increase in the operating potential. Soft x-ray signals last much longer (3000 ns) than those of electrons' and ions' signals (300 ns). The plasma operated at 11 kV permits highest emission of ions, electrons, and x-rays. The ions, electrons, and hard and soft x-ray irradiation on silicon wafer exhibited the presence of damaged trails. Ion irradiation showed the presence of latent damaged trails. Electron irradiation caused more damage to the Si surface compared to ion irradiation due to higher flux and density. Soft x-rays had a lesser effect as compared to Si exposed to hard x-rays due to higher energy of the hard x-rays. In the case of hard x-rays irradiated Si, erupted volcano-like structure is formed. [ABSTRACT FROM AUTHOR]